A.K. Geim, S.J. Bending, et al.
Applied Physics Letters
Paper
Tunnelling Through Very Low Barriers
Abstract
Tunnelling through very low barriers made with GaAs/Ga1-xAlxAs/GaAs heterostructures is investigated. The lowest barrier has a height of 40 meV and a thickness of about 450 A. Reasonable agreement between design parameters, measured data and theoretical values is obtained. © 1985, The Institution of Electrical Engineers. All rights reserved.