Publication
Electronics Letters
Paper

Tunnelling Through Very Low Barriers

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Abstract

Tunnelling through very low barriers made with GaAs/Ga1-xAlxAs/GaAs heterostructures is investigated. The lowest barrier has a height of 40 meV and a thickness of about 450 A. Reasonable agreement between design parameters, measured data and theoretical values is obtained. © 1985, The Institution of Electrical Engineers. All rights reserved.

Date

01 Jan 1985

Publication

Electronics Letters

Authors

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