We demonstrate triggered single photon emission up to 77K from an ordered 5x8 array of InGaAs single quantum dots (SQDs). The SQDs are grown selectively on patterned mesa tops utilizing substrate-encoded size-reducing epitaxy (SESRE). It exploits designed surface-curvature stress gradients to preferentially direct atom migration from mesa sidewalls to the top during growth. The emission from the SQDs exhibits a g(2)(0) of 0.19 ± 0.03 at 8K and decent emission spectral uniformity (standard deviation >1% of emission wavelength). The SESRE QDs are inherently compatible with on-chip integrated light manipulation elements, thereby enabling a path towards integrated nanophotonic systems for quantum information processing.