Publication
Applied Physics Letters
Paper

Transition to faceting in multilayer liquid phase epitaxy of GaAs

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Abstract

During deposition of p- and n-GaAs multilayers by a novel liquid phase epitaxy (LPE) technique on slightly misoriented substrates, a gradual transition from macroscopically steped surfaces to faceting has been observed. The change from various different growth mechanisms on corrugated LPE-grown surfaces to a single one with propagating steps of heights of the order of 10 Å leads to extremely flat surfaces and to improved homogeneous dopant incorporation. These factors are likely to increase the performance of optoelectronic and microwave devices.

Date

22 Jul 2008

Publication

Applied Physics Letters

Authors

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