Transition temperature of ferromagnetic semiconductors: A dynamical mean field study

Abstract

We formulate a theory of doped magnetic semiconductors such as Ga1−xMnx As which have attracted recent attention for their possible use in spintronic applications. We solve the theory in the dynamical mean field approximation to find the magnetic transition temperature Tc as a function of magnetic coupling strength J, carrier density n, and Mn density x. We find that Tc is determined by a subtle interplay between carrier density and magnetic coupling. © 2001 The American Physical Society.