S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
Complementary metal-oxide-semiconductor (CMOS) transistor scaling will continue for at least another decade. However, innovation in transistor structures and integration of novel materials are needed to sustain this performance trend. Here we discuss the challenges and opportunities of transistor scaling for the next five to ten years. © 2006 Elsevier Ltd. All rights reserved.
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications