R. Ghez, M.B. Small
JES
Complementary metal-oxide-semiconductor (CMOS) transistor scaling will continue for at least another decade. However, innovation in transistor structures and integration of novel materials are needed to sustain this performance trend. Here we discuss the challenges and opportunities of transistor scaling for the next five to ten years. © 2006 Elsevier Ltd. All rights reserved.
R. Ghez, M.B. Small
JES
Shiyi Chen, Daniel Martínez, et al.
Physics of Fluids
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films