Thomas E. Karis, C. Mark Seymour, et al.
Rheologica Acta
Complementary metal-oxide-semiconductor (CMOS) transistor scaling will continue for at least another decade. However, innovation in transistor structures and integration of novel materials are needed to sustain this performance trend. Here we discuss the challenges and opportunities of transistor scaling for the next five to ten years. © 2006 Elsevier Ltd. All rights reserved.
Thomas E. Karis, C. Mark Seymour, et al.
Rheologica Acta
T.N. Morgan
Semiconductor Science and Technology
Kigook Song, Robert D. Miller, et al.
Macromolecules
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids