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Publication
REDW/NSREC 2015
Conference paper
Total ionizing dose radiation effects on 14 nm FinFET and SOI UTBB technologies
Abstract
14 nm technology node bulk silicon FinFETs and SOI FinFETs and 14 nm SOI Ultra-Thin-Body and BOX nFETs were irradiated under bias using a 10 keV X-ray source. Irradiation resulted in significant changes in the threshold voltages of the SOI devices and large changes in the off-state current of the bulk FinFETs.