Publication
REDW/NSREC 2015
Conference paper

Total ionizing dose radiation effects on 14 nm FinFET and SOI UTBB technologies

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Abstract

14 nm technology node bulk silicon FinFETs and SOI FinFETs and 14 nm SOI Ultra-Thin-Body and BOX nFETs were irradiated under bias using a 10 keV X-ray source. Irradiation resulted in significant changes in the threshold voltages of the SOI devices and large changes in the off-state current of the bulk FinFETs.

Date

24 Nov 2015

Publication

REDW/NSREC 2015

Authors

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