About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
IEEE TNS
Paper
Total-dose and SEU characterization of 0.25 micron CMOS/SOI integrated circuit memory technologies
Abstract
Total-dose and single-event-effect radiation characterization of 0.25 micron test macro SRAMs fabricated at IBM's East Fishkill research foundry in un-hardened bulk and unhardened partially-depleted SOI silicon, are reported. The design and fabrication process were optimized for highperformance and short access time using supply voltages of 2.5v for the 64K-bit and 1.8v for the 144K and 288K-bit test macro SRAMs.