Total-dose and SEU characterization of 0.25 micron CMOS/SOI integrated circuit memory technologies

Abstract

Total-dose and single-event-effect radiation characterization of 0.25 micron test macro SRAMs fabricated at IBM's East Fishkill research foundry in un-hardened bulk and unhardened partially-depleted SOI silicon, are reported. The design and fabrication process were optimized for highperformance and short access time using supply voltages of 2.5v for the 64K-bit and 1.8v for the 144K and 288K-bit test macro SRAMs.