About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
AMC 2006
Conference paper
Three-dimensional imaging of nano-voids in copper interconnects using incoherent bright field (IBF) tomography
Abstract
Conventional transmission electron microscopies are currently used to investigate the fine detail (5-50nm) of microelectronics but are inadequate for imaging complicated interconnect structures due to the overlap of features in projection. Electron tomography is a technique that extracts the lost information in the projection direction from a tilt series of images assuming a monotonic relationship between thickness and image intensity. Typical imaging techniques applied in transmission electron microscopy produce a non-linear and non-monotonic dependence of intensity on thickness making them inadequate for electron tomography. We report on the use of an incoherent bright field imaging technique in a scanning transmission electron microscope optimized for the three-dimensional reconstruction of thick copper interconnect and via structures. Linearity of the signal in samples up to ∼μm thick allows us to quantitatively reconstruct and quantify structures in three dimensions. © 2007 Materials Research Society.