Thin-film heterojunction field-effect transistors with crystalline si channels and low-temperature PECVD contacts

Abstract

Heterojunction field-effect transistor devices with thin-film crystalline silicon channels and gate, source, and drain contacts formed by plasma-enhanced chemical vapor deposition (PECVD) at temperatures ${<}{\rm 200}^{\circ}{\rm C}$ have been demonstrated. The gate and source/drain contacts are comprised of hydrogenated amorphous silicon and crystalline silicon, respectively; both grown in the same PECVD reactor. An ON/OFF ratio of ${>}{10}6, pinch-off voltage of approximately. © 2013 IEEE.