Conference paper
New paradigms for cost-effective III-V photovoltaic technology
Davood Shahrjerdi, Stephen W. Bedell, et al.
ECS Transactions
Heterojunction field-effect transistor devices with thin-film crystalline silicon channels and gate, source, and drain contacts formed by plasma-enhanced chemical vapor deposition (PECVD) at temperatures have been demonstrated. The gate and source/drain contacts are comprised of hydrogenated amorphous silicon and crystalline silicon, respectively; both grown in the same PECVD reactor. An ON/OFF ratio of ${>}{10}6, pinch-off voltage of approximately. © 2013 IEEE.
Davood Shahrjerdi, Stephen W. Bedell, et al.
ECS Transactions
Bahman Hekmatshoar
IEEE Electron Device Letters
Davood Shahrjerdi, Bahman Hekmatshoar, et al.
Journal of Electronic Materials
Davood Shahrjerdi, Bahman Hekmatshoar, et al.
ECS Meeting 2012