Bahman Hekmatshoar, Davood Shahrjerdi, et al.
Applied Physics Letters
Electrical stability and flicker (1/f) noise of thin-film heterojunction field-effect transistors (HJFETs) comprised of hydrogenated amorphous Si (a-Si) gate and hydrogenated crystalline Si (c-Si) source and drain regions on small-grain poly-Si substrates are investigated and benchmarked against conventional thin-film transistors (TFTs). Despite the low growth temperature of a-Si and c-Si (200°C), HJFETs are found to have higher stability and lower flicker noise than conventional TFTs. These results may be attributed partly to the device structure and partly to the high-quality gate heterojunction of the HJFETs.
Bahman Hekmatshoar, Davood Shahrjerdi, et al.
Applied Physics Letters
Bahman Hekmatshoar, Davood Shahrjerdi, et al.
IRPS 2011
Bahman Hekmatshoar, Davood Shahrjerdi, et al.
SPIE OPTO 2014
Davood Shahrjerdi, Stephen W. Bedell, et al.
ECS Transactions