Phase Change Memory and its intended applications
Chung Lam
IEDM 2014
Thin-Film heterojunction field-effect transistor (HJFET) devices with crystalline Si (c-Si) channels and gate regions comprised of hydrogenated amorphous silicon (a-Si) or organic materials are demonstrated. The HJFET devices are processed at 200°C and room temperature, respectively; and exhibit operation voltages below 1V, subthreshold slopes in the range of 70-100mV/dec and off-currents as low as 25 fA/μm. The HJFET devices are proposed for use in active matrix backplanes comprised of low-temperature poly-Si (LTPS) as the c-Si substrate. Compared to conventional LTPS devices which require process temperatures up to 600°C and complex fabrication steps, the HJFET devices offer lower process temperature, simpler fabrication steps and lower operation voltages without compromising leakage or stability.
Chung Lam
IEDM 2014
Davood Shahrjerdi, Bahman Hekmatshoar, et al.
ECS Meeting 2012
Bahman Hekmatshoar, Davood Shahrjerdi, et al.
Applied Physics Letters
Stefan Harrer, Shafaat Ahmed, et al.
Langmuir