Publication
Journal of Applied Physics
Paper

Thickness dependence of the photoconductivity of phosphorus-doped hydrogenated amorphous silicon

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Abstract

The thickness and spectral dependences of the photoconductance of phosphorus-doped hydrogenated amorphous silicon show that the surface and interface layers are more photosensitive than the bulk, and further, that the interface layer is the more photoconductive of the two boundary layers. We interpret the results as further evidence for band bending at the film boundaries.

Date

09 Jul 2008

Publication

Journal of Applied Physics

Authors

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