M.Ya. Azbel, A. Hartstein, et al.
Physica B+C
It is suggested that resonant tunneling via defect-related states is an important mechanism for high-field carrier injection into thin SiO2 films of metal-oxide-semiconductor structures. A model is also proposed for high-field insulator breakdown which cannot be explained by available theories. © 1983 The American Physical Society.
M.Ya. Azbel, A. Hartstein, et al.
Physica B+C
Yuval Gefen, Yoseph Imry, et al.
Surface Science
M.H. Brodsky, D.P. DiVincenzo
Physica B+C
M. Grimsditch, W. Senn, et al.
Solid State Communications