Publication
Physical Review Letters
Paper

Novel mechanism for tunneling and breakdown of thin SiO2 films

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Abstract

It is suggested that resonant tunneling via defect-related states is an important mechanism for high-field carrier injection into thin SiO2 films of metal-oxide-semiconductor structures. A model is also proposed for high-field insulator breakdown which cannot be explained by available theories. © 1983 The American Physical Society.

Date

07 Nov 1983

Publication

Physical Review Letters

Authors

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