Thin Solid Films

Thickness dependence of the amorphous-cubic and cubic-hexagonal phase transition temperatures of GeSbTe thin films on silicon nitride

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The crystallization temperature of GeSbTe thin films with thicknesses between 11 and 87 nm on silicon nitride was studied through resistance versus temperature measurements. The amorphous-cubic phase transition occurs at ∼ 150 °C for all films thicknesses, whereas the cubic-hexagonal phase transition temperature increases with film thickness, from ∼ 200 °C for the 20 nm film to ∼ 250 °C for the 87 nm film. The cubic-hexagonal transition occurs gradually for the 11 nm film. Implications for phase-change memory devices are discussed. © 2011 Elsevier B.V. All rights reserved.