Publication
Physical Review Letters
Paper

Theory of substitutional deep traps in covalent semiconductors

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Abstract

The energies of substitutional deep A1 impurity levels in zinc-blende semiconductors are predicted and related to the impurities' atomic energies and to host dangling bond (ideal vacancy) energies. © 1980 The American Physical Society.

Date

24 Mar 1980

Publication

Physical Review Letters

Authors

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