Theory of substitutional deep traps in covalent semiconductors

Harold P. Hjalmarson; P. Vogl; D.J. Wolford; John D. Dow

doi:10.1103/PhysRevLett.44.810

Physical Review Letters

Paper

24 Mar 1980

Theory of substitutional deep traps in covalent semiconductors

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Abstract

The energies of substitutional deep A1 impurity levels in zinc-blende semiconductors are predicted and related to the impurities' atomic energies and to host dangling bond (ideal vacancy) energies. © 1980 The American Physical Society.

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Exciton transfer at low temperature in GaxIn1-xP:N and GaAs1-xPx:N

Transfer of excitons bound to nitrogen in GaAs1-xPx:N

Time decays of donor-bound excitons in GaAs under pressure-induced-X crossover

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