Nauman Z. Butt, Kevin McStay, et al.
IEDM 2010
The role of dislocation-dislocation interactions on the relaxation behavior of biaxially stressed semiconductor thin films is considered by including interaction terms in an energy minimization. Both parallel and crossing interactions are considered and energies are calculated for orthogonal arrays of equally spaced 60°misfit dislocations, and it is shown that the parallel interactions can be either attractive or repulsive. The equilibrium misfit dislocation density is shown to be a function of the "cutoff" distance for dislocation interactions in these structures.
Nauman Z. Butt, Kevin McStay, et al.
IEDM 2010
A.O. Cifuentes, S. Stiffler
ASME Winter Conference 1992
S. Stiffler, Carol Stanis, et al.
MRS Fall Meeting 1992
Carol Stanis, J.M. Cotte, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films