F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
Polycrystalline-Si/GaAs interfaces have been prepared by depositing hydrogenated amorphous Si (a-Si) onto GaAs in a silane plasma at 450°C and annealing at temperatures between 600° and 1050°C. Rutherford backscattering, secondary ion mass spectroscopy, and transmission electron microscopy analyses show that the resulting polycrystalline-Si/GaAs interface is metallurgically stable when the Si is undoped, while significant interdiffusion occurs when P or As are added to the Si. The Si diffusion into the GaAs is rapid (D = 10 -11 cm2/s at 1000°C) depends on concentration and increases with increasing P content in the Si. Ohmic contacts prepared using Si(P-4 atom percent (aio))/GaAs (semi-insulating) annealed at 800° and 1050°C, gave contact resistance of 1.7 × 100-4 and 1.2 × 10 -4 Ω cm2, respectively. © 1986, The Electrochemical Society, Inc. All rights reserved.
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
J.V. Harzer, B. Hillebrands, et al.
Journal of Magnetism and Magnetic Materials
J.K. Gimzewski, T.A. Jung, et al.
Surface Science
R. Ghez, J.S. Lew
Journal of Crystal Growth