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IEEE T-ED
Paper

The Implanted Stepped-Oxide MNOSFET

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Abstract

A novel MNOSFET-device structure has been demon- strated to solve a serious problem with MNOS memory devices. The new structure eliminates the parasitic FET devices which are formed in parallel with the variable threshold MNOSFET - when the conventional device structure is used. Copyright © 1975 by the Institute of Electrical and Electronics Engineers, Inc.

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Publication

IEEE T-ED

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