Publication
IEEE T-ED
Paper

The Implanted Stepped-Oxide MNOSFET

View publication

Abstract

A novel MNOSFET-device structure has been demon- strated to solve a serious problem with MNOS memory devices. The new structure eliminates the parasitic FET devices which are formed in parallel with the variable threshold MNOSFET - when the conventional device structure is used. Copyright © 1975 by the Institute of Electrical and Electronics Engineers, Inc.

Date

01 Jan 1975

Publication

IEEE T-ED

Authors

Share