The impact of SiGe BiCMOS technology on microwave circuits and systems

Abstract

This paper focuses on low power and high integration capabilities of SiGe BiCMOS technology and describes the performance improvements which can be obtained by its utilization in mixed-signal microwave circuits and systems. By way of examples, the article highlights the fact that the combination of high-bandwidth, high-gain and low-noise SiGe HBT s with dense CMOS functionality in a SiGe BiCMOS technology enables implementation of powerful single-chip transceiver architectures for multi-GHz and multi-Gb/s communication applications.