The Hall effect in ballistic junctions

Abstract

In narrow high-mobility conductors the predominant source of scattering is reflection of carriers off the confining potential. We demonstrate that by changing the geometry of the intersection of the Hall probes with the conductor, the Hall resistance can be quenched, negative or enhanced. More complex junction geometries can lead to one of these phenomena for one field polarity and to another for the other field polarity. At liquid helium temperatures these results can be explained by following trajectories. In the milli-Kelvin range fluctuations are superimposed. At high fields strong resonant depressions of the Hall resistance are found which may be associated with bound states in the region of the cross. © 1990.