The extent of crystallization resulting from submicrosecond optical pulses on Te-based memory materials

Abstract

Thermal profiles resulting from a laser-induced melt-quench cycle of a Te-based chalcogenide film on Mylar have been determined. These data are combined with experimentally obtained crystallization rates of Weiser et al. to determine the extent of crystallization that may occur in regions adjacent to the laser-produced amorphous region. A maximum fractional crystallization of less than 10-2 is found which indicates that no crystalline halo is expected to surround such an amorphous region. Thus, the extent to which photocrystallization plays a role in these alloy materials appears still to be an unanswered question. © 1973 American Institute of Physics.