U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
The propagation of an electron through a crystal is conceived as involving two qualitatively different mechanisms, a quasifree motion as in empty space and a jumping from one localized state attached to an atom to another. A Hamiltonian containing two terms corresponding to these mechanisms is examined, and its behavior in the presence of a dislocation is studied. In particular, the case of a screw dislocation is investigated, and all the eigenfunctions are found under the assumption that there is no screening. The electron density in the neighborhood of the screw dislocation is computed. It is shown that there is a net repulsion of the electrons from the dislocation axis which results in a well denned positive effective charge per unit length, even though there is no volume change. © 1966.
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
Shiyi Chen, Daniel Martínez, et al.
Physics of Fluids
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007