The electronic properties and control of semiconductor interfaces

Abstract

Much progress has been made towards the understanding and elimination of the Fermi level pinning problem at compound semiconductor surfaces and interfaces. This progress includes the discovery of several new techniques for reducing and controlling the surface state density and the achievement of metal work function dominated barrier heights at metal/(100) GaAs interfaces. This paper will review this work and the relevance of various Fermi level pinning theories to these results. © 1990.