E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
Current, voltage, temperature (I-V-T) and conductance, voltage, temperature (G-V-T) as well as switching time measurements have been made on the switching states of bistable amorphous niobium pentoxide films. The measurements are indicative of a charge transfer mechanism occurring prior to switching. I-V-T and G-V-T measurements on the switching states for temperatures in the range 1.3 to 4.2°K as well as at 77°K are discussed. © 1972.
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
K.A. Chao
Physical Review B
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano