R. Ghez, J.S. Lew
Journal of Crystal Growth
Using a combination of copper (Cu) thermocompression bonding and silicon wafer thinning, a face-to-face silicon bi-layer layer stack is fabricated. The oxygen content in the bonded Cu layer is analyzed using secondary ion mass spectrometry (SIMS). Copper-covered wafers that are exposed to the air for 12 h and 12 days prior to bonding exhibit 0.08 at.% and 2.96 at.% of oxygen, respectively. However, prebonding forming gas anneal at 150°C for 15 min on 12-day-old Cu wafers successfully reduces the oxygen content in the bonded Cu layer to 0.52 at.%.
R. Ghez, J.S. Lew
Journal of Crystal Growth
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992