O.L. Alerhand, A. Nihat Berker, et al.
Physical Review Letters
uv photoemission and electron-energy-loss measurements of Si(111)-7 × 7 between T=15and300 K reveal significant temperature-dependent changes in the occupied surface states and their transitions which can be associated with electron-phonon coupling at the surface. Several new surface states and transitions are determined at low temperatures, including a highly localized (∼2-meV-wide), half-occupied state that resides within a 100-meV-wide surface-state band gap and determines the Fermi-level position. © 1983 The American Physical Society.
O.L. Alerhand, A. Nihat Berker, et al.
Physical Review Letters
E.J. Van Loenen, J.E. Demuth, et al.
Physical Review Letters
J.E. Demuth, D.W. Jepsen, et al.
Physical Review Letters
B.N.J. Persson, A. Liebsch
Physical Review B