William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron
The temperature dependence of the surface-state electronic transition for cleaved Ge(111)-2×1 is reported and compared to previous results on Si(111)-2×1. Ge(111)-2×1 shows an almost linear dependence of the surface-state band gap between 30 and 295 K, varying between 535 and 415 meV, respectively. Cleaved Ge(111)-2×1 shows little evidence for the defect-induced states usually found, even on excellent single-domain 2×1 cleaves of Si(111). © 1986 The American Physical Society.
William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron
R. Ghez, M.B. Small
JES
J. Tersoff
Applied Surface Science
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001