Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
Paper
TEM observations on grain boundaries in sintered silicon
Abstract
Grain boundaries in silicon with a predetermined orientation have been prepared by the sintering of two single crystals. A combination of standard transmission electron microscopy and lattice imaging was used to investigate the Structure of the boundaries produced. Low–angle grain boundaries on {100} and {111} planes, and twin boundaries on {111} planes are discussed in detail. © 1979 Taylor & Francis Group, LLC.
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