PaperOn the relationship between stress induced leakage currents and catastrophic breakdown in ultra-thin SiO2 based dielectricsD.A. Buchanan, J.H. Stathis, et al.Microelectronic Engineering
PaperExplanation for the oxide thickness dependence of breakdown characteristics of metal-oxide-semiconductor structuresD.J. DiMaria, J.H. StathisApplied Physics Letters
PaperHigh current injection into SiO2 from Si rich SiO2 films and experimental applicationsD.J. DiMaria, D.W. DongJournal of Applied Physics
Conference paperSPECTROSCOPIC STUDIES OF ELECTRONIC CONDUCTION IN SiO//2 AND Si-RICH SiO//2.T.N. Theis, J.R. Kirtley, et al.INFOS 1982
