TA-A2 Electrically Alterable Read-only Memory Using Si Rich SiO2 Injectors and a Floating Polycrystalline Silicon Storage Layer

Paper

01 Jan 1980

TA-A2 Electrically Alterable Read-only Memory Using Si Rich SiO₂ Injectors and a Floating Polycrystalline Silicon Storage Layer

No abstract available.

Paper

D.J. DiMaria, D.W. Dong, et al.

Journal of Applied Physics

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IEEE TNS

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Physical Review B

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Applied Physics Letters