About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Physical Review B
Paper
Symmetrically strained Si/Ge superlattices on Si substrates
Abstract
Symmetrically strained Si/Ge superlattices with an overall thickness of 0.2 m, well above the critical thickness (10 nm) of unsymmetrically strained superlattices of the same composition, are studied. Strain adjustment is obtained by growing thin homogeneous Si0.4Ge0.6 buffer layers (20 nm) on Si substrates. The period lengths vary in the range 0.7-2.8 nm. Raman scattering experiments confirm quantitatively the strain distribution and the superlattice periodicity. Observed zone-folded acoustic-phonon energies agree well with theoretically expected dispersion relations. © 1988 The American Physical Society.