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Physical Review B
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Surface morphology of GaAs(110) by scanning tunneling microscopy

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Abstract

The surface morphology of cleaved GaAs(110) has been studied by scanning tunneling microscopy. Atomic rows (zigzag chains of alternating Ga and As atoms directed in the [110] direction) are clearly resolved, and structure along the rows is also seen. The surface is observed to have 1×1 periodicity, with an [001] corrugation amplitude in the range 0.20.5 A, and a [110] corrugation amplitude of 0.05 A. Differences between images of n- and p-type GaAs are seen. Surface point defects are observed, consisting typically of 0.7-A-deep depressions along an atomic row. © 1985 The American Physical Society.

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Physical Review B

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