Surface morphology of GaAs(110) by scanning tunneling microscopy

Abstract

The surface morphology of cleaved GaAs(110) has been studied by scanning tunneling microscopy. Atomic rows (zigzag chains of alternating Ga and As atoms directed in the [110] direction) are clearly resolved, and structure along the rows is also seen. The surface is observed to have 1×1 periodicity, with an [001] corrugation amplitude in the range 0.20.5 A, and a [110] corrugation amplitude of 0.05 A. Differences between images of n- and p-type GaAs are seen. Surface point defects are observed, consisting typically of 0.7-A-deep depressions along an atomic row. © 1985 The American Physical Society.