Publication
Physical Review Letters
Paper

"surface dislocation" process for surface reconstruction and its application to the silicon (111) 7×7 reconstruction

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Abstract

The silicon (111) 7×7 surface reconstruction has been observed by surface-sensitive transmission-electron microscopy. The topography of the reconstructed surface is accounted for by the cooperative motion of surface atoms over large areas via a new process involving the generation of "surface dislocations" to relieve the backbond-induced surface stresses. © 1983 The American Physical Society.

Date

18 Jul 1983

Publication

Physical Review Letters

Authors

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