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Physical Review Letters
Paper

Substrate bias effects on electron mobility in silicon inversion layers at low temperatures

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Abstract

The mobility of electrons in silicon inversion layers and conductance activation energy have been measured as a function of substrate bias. The mobility increased and the activation energy decreased as the electrons were forced toward the surface. This seems inconsistent with activated conduction arising from potential fluctuations due to oxide charge. © 1975 The American Physical Society.

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Physical Review Letters

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