A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Time-resolved luminescence spectra from excitons in CdS0.53Se0.47 at 2 K with 250 psec resolution reveal line narrowing at short times, followed by broadening and a shift towards lower energy, during the first few nanoseconds. We interpret the spectral diffusion as exciton transfer between states localized as a result of random potential fluctuations of the mixed crystal. The variation of luminescence decay kinetics with temperature suggests that a gradual transition from localized to extended states exists within a disorder-broadened exciton band. © 1983 The American Physical Society.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
Revanth Kodoru, Atanu Saha, et al.
arXiv
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008