About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Nano Letters
Paper
Sub-10-nm nanochannels by self-sealing and self-limiting atomic layer deposition
Abstract
We report on a novel fabrication method of a nanochannel ionic field effect transistor (IFET) structure with sub-10-nm dimensions. A self-sealing and self-limiting atomic layer deposition(ALD) facilitates the fabrication of lateral type nanochannels smaller than the e- beam or optical lithographic limits. Using highly conformal ALD film structures, including TiO2. TiO2/TiN,and Al2O3/Ru, we have fabricated lateral sun-10-nm nanochannels with good control over channel diameter, Nanochannels surrounded by core/shell (high-k dielectric/metal) layers give rise to all-auound-gatin IFETs, an important functional element in an electrofluidic based circuit system. © 2010 American Chemical Society.