P.J.H. Denteneer, C.G. Van De Walle, et al.
Physical Review B
A variety of experiments have revealed several puzzling properties of hydrogen-impurity pairs. For example, H atoms passivate the electrical activity of some impurities, whereas they induce electrical activity in others; they appear to tunnel around some impurities but not around others. We report first-principles pseudopotential-density-functional calculations for several hydrogen-impurity complexes and unravel the origins and intricacies of the rich behavior of H bound to different substitutional impurities in Si and Ge. © 1989 The American Physical Society.
P.J.H. Denteneer, C.G. Van De Walle, et al.
Physical Review B
D.B. Laks, C.G. Van De Walle, et al.
Physical Review B
Peter E. Bloechl, C.G. Van de Walle, et al.
Symposium on Process Physics and Modeling in Semiconductor Technology 1990
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Physica B+C