Structural and electronic properties induced by hydrogen adsorption on the GaAs(100) surface

Abstract

The structural and electronic properties for hydrogen adsorbed on the GaAs(110) surface have been studied by the self-consistent pseudopotential method with a slab geometry and half and one monolayer coverages. The positions of the hydrogen atoms and the surface atoms for the stable configuration are given. The bonding nature is presented and the states at the Fermi energy are also determined. © 1991.