D. Chen, J.M. Viner, et al.
Physical Review B
We report for the first time on the stretched exponential time dependence of positive charge and spin generated by subband-gap ultraviolet illumination in gate-quality nitrogen-rich amorphous silicon nitride films. We have found that a stretched exponential function, which characterizes dispersive charge transport in silicon nitride, gives the best description of our experimental results. We also propose a mechanism which we believe is responsible for the creation of the positive charge and spin in the amorphous silicon nitride films.
D. Chen, J.M. Viner, et al.
Physical Review B
Frank R. Libsch, Jerzy Kanicki
SSDM 1992
T. Inushima, M.H. Brodsky, et al.
Optical Effects in Amorphous Semiconductors 1984
D. Chen, J.M. Viner, et al.
Journal of Non-Crystalline Solids