Publication
Applied Physics Letters
Paper

Thermal annealing of light-induced metastable defects in hydrogenated amorphous silicon nitride

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Abstract

Exposure to ultraviolet light induces paramagnetic, metastable defects in hydrogenated amorphous silicon nitride (a-SiN1.6:H) thin films. The thermally induced decay of the light-induced paramagnetic defects follows a stretched exponential dependence on annealing time, exp [-(t/τ) β], and displays a temperature-dependent β and τ. These results indicate that a multiple trapping or a trap-controlled hopping mechanism is involved in the annealing process with an apparent activation energy of 0.43 eV.

Date

01 Dec 1991

Publication

Applied Physics Letters

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