M. Hoinkis, C.S. Yannoni, et al.
Chemical Physics Letters
Exposure to ultraviolet light induces paramagnetic, metastable defects in hydrogenated amorphous silicon nitride (a-SiN1.6) thin films. The thermally induced decay of the light-induced paramagnetic defects follows a stretched exponential dependence on annealing time, exp [-(t/τ) β], and displays a temperature-dependent β and τ. These results indicate that a multiple trapping or a trap-controlled hopping mechanism is involved in the annealing process with an apparent activation energy of 0.43 eV.
M. Hoinkis, C.S. Yannoni, et al.
Chemical Physics Letters
W.L. Warren, P. Lenahan, et al.
Journal of Applied Physics
M. Zelikson, K. Weiser, et al.
Applied Physics Letters
P. Lenahan, D.T. Krick, et al.
Applied Surface Science