Skip to main content
Research
Focus areas
Blog
Publications
Careers
About
Back
Focus areas
Semiconductors
Artificial Intelligence
Quantum Computing
Hybrid Cloud
Back
About
Overview
Labs
People
Back
Semiconductors
Back
Artificial Intelligence
Back
Quantum Computing
Back
Hybrid Cloud
Back
Overview
Back
Labs
Back
People
Research
Focus areas
Semiconductors
Artificial Intelligence
Quantum Computing
Hybrid Cloud
Blog
Publications
Careers
About
Overview
Labs
People
Open IBM search field
Close
Applied Physics Letters
Paper
23 Dec 2004
Effect of surface scattering on electron mobility in an inversion layer on p-type silicon
View publication
Abstract
No abstract available.
Related
Paper
Intersubband resonances in sosmos accumulation layers
Paper
Apparatus for light efficiency measurement
Paper
Electrical and physical properties of high-Ge-content Si/SiGe p-type quantum wells
Paper
Landau-level broadening and scattering time in modulation doped GaAs/AlGaAs heterostructures
View all publications
