R.L. Anderson, A. Gangulee, et al.
Journal of Electronic Materials
Paper
Stress-enhanced diffusion in thin films
Abstract
Stress enhancement of grain boundary diffusion of Be in thin Al films was investigated using a new experimental technique. Plane biaxial tensile stresses were found to promote lateral penetration of Be along the grain boundaries of A1 films. © 1970, Taylor & Francis Group, LLC. All rights reserved.
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