Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Grain growth in vapor-deposited 81 at.% Ni+19 at.% Fe thin films 200 and 400 Å thick in the temperature range 350°-450°C has been investigated by transmission electron microscopy. The results have been interpreted in terms of a previously published model of grain growth in thin films on substrates. The activation energy for grain growth in this alloy has been determined as 1.7±0.2 eV. © 1974.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications
A. Gangulee, F.M. D'Heurle
Thin Solid Films