Publication
Microelectronic Engineering
Paper

Strain relaxation in GeSi layers with uniform and graded composition

View publication

Abstract

We have calculated inter-dislocation spacing and strain relaxation in stable and metastable strained GexSi1-x epilayers using an improved theory. Epilayers with graded Ge compositions are also considered. Strain relaxation on annealing MBE grown layers is measured and is found to agree with the calculated values. © 1991.

Date

01 Jan 1991

Publication

Microelectronic Engineering

Authors

Topics

Share