Hiroshi Ito, Reinhold Schwalm
JES
We have calculated inter-dislocation spacing and strain relaxation in stable and metastable strained GexSi1-x epilayers using an improved theory. Epilayers with graded Ge compositions are also considered. Strain relaxation on annealing MBE grown layers is measured and is found to agree with the calculated values. © 1991.
Hiroshi Ito, Reinhold Schwalm
JES
R. Ghez, M.B. Small
JES
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures