Strain loss in epitaxial Si: C films induced by phosphorus diffusion

Abstract

The influence of P diffusion on the thermal stability of epitaxial Si:C films has been studied. P diffusion is shown to greatly contribute to the strain loss in epitaxial Si:C films. It is proposed that the strain loss is mainly caused by the interaction of Si interstitial atoms injected by P diffusion with substitutional C atoms, driving them to non-substitutional lattice sites. ©The Electrochemical Society.