T.N. Morgan, M.H. Pilkuhn, et al.
Physical Review
We report the first experimental determination of the microscopic strain fields surrounding substitutional impurities in a crystal. We have used pair spectra in GaP to reveal the splitting of Zn or C acceptor levels in the strain fields generated by O, S, Se, or Te donor ions. The anisotropic splitting, which agrees with a simple effective-mass theory, is the same for all four donors. We conclude that effects associated with the size of these impurities are distributed over a volume of the crystal extending more than 20 from the impurity. © 1971 The American Physical Society.
T.N. Morgan, M.H. Pilkuhn, et al.
Physical Review
T.N. Morgan
ICDS 1984
M.I. Nathan, T.N. Morgan, et al.
Physical Review
T.N. Morgan
Semiconductor Science and Technology