Compression for data archiving and backup revisited
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
High-performance graphene transistors for radio frequency applications have received much attention and significant progress has been achieved. However, devices based on large-area synthetic graphene, which have direct technological relevance, are still typically outperformed by those based on mechanically exfoliated graphene. Here, we report devices with intrinsic cutoff frequency above 300 GHz, based on both wafer-scale CVD grown graphene and epitaxial graphene on SiC, thus surpassing previous records on any graphene material. We also demonstrate devices with optimized architecture exhibiting voltage and power gains reaching 20 dB and a wafer-scale integrated graphene amplifier circuit with voltage amplification. © 2012 American Chemical Society.
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry
Shlomo Shlafman, David Goren, et al.
COMCAS 2011
Xikun Hu, Wenlin Liu, et al.
IEEE J-STARS