Variable transmission lines: Structure and compact modeling
Shlomo Shlafman, David Goren, et al.
COMCAS 2011
High-performance graphene transistors for radio frequency applications have received much attention and significant progress has been achieved. However, devices based on large-area synthetic graphene, which have direct technological relevance, are still typically outperformed by those based on mechanically exfoliated graphene. Here, we report devices with intrinsic cutoff frequency above 300 GHz, based on both wafer-scale CVD grown graphene and epitaxial graphene on SiC, thus surpassing previous records on any graphene material. We also demonstrate devices with optimized architecture exhibiting voltage and power gains reaching 20 dB and a wafer-scale integrated graphene amplifier circuit with voltage amplification. © 2012 American Chemical Society.
Shlomo Shlafman, David Goren, et al.
COMCAS 2011
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
Daniel J. Coady, Amanda C. Engler, et al.
ACS Macro Letters