M. Liehr, S. Cohen
Applied Physics Letters
Decomposition of SiO2 films on Si(100) during ultrahigh-vacuum anneal has been shown previously to be preceded, at low anneal temperatures, by electrical defect creation in metal-oxide-semiconductor structures. In this letter, the presence of stacking faults in a Si substrate is shown to be related to enhanced oxide decomposition during high-temperature anneal. Decomposition is enhanced because of the creation of a larger number of nucleation centers for the formation of volatile SiO. These nucleation centers are the result of the metals gettered in the stacking faults close to the SiO2/Si interface.
M. Liehr, S. Cohen
Applied Physics Letters
J.C.M. Hwang, P.S. Ho, et al.
Journal of Applied Physics
P.S. Ho, M. Liehr, et al.
Surface Science
P.A. Thiry, M. Liehr, et al.
Physica Scripta