Spin-transfer Torque MRAM - Status and Outlook

Abstract

Spin-Transfer-Torque (STT) MRAM is an emerging memory technology with a unique combination of non-volatility and high write endurance. STT-MRAM products have been commercially available for both standalone memory and eFlash-replacement applications by successfully integrating magnetic tunnel junctions with CMOS technology. This talk will first give a brief overview of the current status of the STT-MRAM technology and then focus on materials innovations and remaining challenges to further expand STT-MRAM's application space.