B.M. Grossman, W. Hwang, et al.
Solid-State Electronics
An experimental study has been made of the spectral response of photocurrents in the n-channel Si MOS transistor, including the effects of temperature and applied voltages. It is found that the photoresponse may be enhanced over the entire spectral range by the application of a gate or substrate bias voltage. Of particular interest, however, is that the response at short wavelengths (λ≲0.6 μ) undergoes a considerably greater relative increase than that over the remainder of the spectrum. This tendency is most pronounced in the case of an applied substrate bias.
B.M. Grossman, W. Hwang, et al.
Solid-State Electronics
F. Fang, A.B. Fowler
IEEE T-ED
W.E. Howard, F. Fang
Physical Review B
D.D. Tang, F. Fang, et al.
IEDM 1985