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Journal of Applied Physics
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Spectral response of photocurrents in the MOST and the dependence on gate and substrate bias

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Abstract

An experimental study has been made of the spectral response of photocurrents in the n-channel Si MOS transistor, including the effects of temperature and applied voltages. It is found that the photoresponse may be enhanced over the entire spectral range by the application of a gate or substrate bias voltage. Of particular interest, however, is that the response at short wavelengths (λ≲0.6 μ) undergoes a considerably greater relative increase than that over the remainder of the spectrum. This tendency is most pronounced in the case of an applied substrate bias.

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Journal of Applied Physics

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