Publication
Journal of Applied Physics
Paper

Spectral response of photocurrents in the MOST and the dependence on gate and substrate bias

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Abstract

An experimental study has been made of the spectral response of photocurrents in the n-channel Si MOS transistor, including the effects of temperature and applied voltages. It is found that the photoresponse may be enhanced over the entire spectral range by the application of a gate or substrate bias voltage. Of particular interest, however, is that the response at short wavelengths (λ≲0.6 μ) undergoes a considerably greater relative increase than that over the remainder of the spectrum. This tendency is most pronounced in the case of an applied substrate bias.

Date

26 Aug 2008

Publication

Journal of Applied Physics

Authors

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