Publication
IRPS 2011
Conference paper

Spectral resolution of photon emission from SiGe:C heterojunction bipolar transistors (HBTs)

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Abstract

This publication presents photon emission measurements of SiGe:C-HBTs acquired with Si-CCD and InGaAs detector, proving the InGaAs-camera capability for this application. The emission characteristic helps distinguish operating modes like saturation, active or avalanche. Spectral response shows a local maximum at 1300 nm, representing the decreased bandgap due to additional germanium. © 2011 IEEE.

Date

23 Jun 2011

Publication

IRPS 2011

Authors

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